III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon

Abstract

The research goal is to further develop quantum well heterostructure (QWH) lasers and to realize reliable Al(x)Ga(1-x)As-GaAs QWH lasers on Si. In spite of the significant lattice and thermal expansion mismatch between GaAs and Si, the idea of splicing III-V semiconductor technology, i.e., optoelectronics and photonics, onto Si has obvious appeal. Adding to this is the fact, as shown earlier in this work, that cw 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that the Si substrate serves as a better heat sink than GaAs. This makes possible the right-side-up heat sinking needed for electronic-photonic integrated circuits. This report contains research results on quantum well heterostructures on Si, impurity-induced layer disordering, phonon-assisted laser operations and other laser studies. (jhd)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1989
Accession Number
ADA216980

Entities

People

  • G. E. Stillman
  • K. C. Hsieh
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Electrical Engineering
  • Electronics Laboratories
  • Laser Applications
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Optical Properties
  • Optics
  • Optoelectronic Devices
  • Optoelectronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Artificial Intelligence
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing