An Ellipsometric Measurement of Optical Properties for InP Surfaces

Abstract

Several chemical cleaning procedures for Indium Phosphide surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involve the formation of surface films. In order to determine the complex index of reflection for InP, a novel method which employs ellipsometry measurements of a thin non-absorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon dioxide adn Silicon nitride films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521+i0.300 at the wavelength of 632.8 nm. Keywords: Semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 18, 1990
Accession Number
ADA217185

Entities

People

  • Eugene A. Irene
  • X. Liu

Organizations

  • University of North Carolina at Chapel Hill

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Ceramic Materials
  • Chemical Cleaning
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Data Analysis
  • Films
  • Measurement
  • Military Research
  • North Carolina
  • Optical Properties
  • Reflectance
  • Refractive Index
  • Security
  • Semiconductors
  • Surface Properties

Readers

  • Semiconductor Device Technology
  • Spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene