Preparation and Characterization of Alumina Films Prepared by a Novel Spray Pyrolysis Method
Abstract
Alumina thin films of 2000 A were deposited on n-type silicon wafers by a novel spray pyrolysis method. The spray solution contained an aluminum acetylacetonato complex which was characterized by NMR techniques. The deposited films of Al2O3 were homogeneous, uniform, dense and had breakdown potentials of greater than 10 V. Aluminum oxide is an attractive candidate for thin insulating layers in electronic devices because of its high dielectric constant, low sensitivity to Na+ diffusion and high radiation resistance. These films would be useful for numerous applications including surface protection and selective masking during diffusion in device isolation masking against impurities, junction passivation, and insulation between metal layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1990
- Accession Number
- ADA217570
Entities
People
- Aaron Wold
- C. Hannigan
- J. O. Edwards
- Kirby Dwight
- Robert N. Kershaw
- W. J. Desisto
- Y.-t. Qian
Organizations
- Brown University