Mechanisms of Reactive Etching
Abstract
This research project addressed several aspects of the surface chemistry of electronic materials. COF2 was shown to be an effective thermal and photochemical etchant of Si and SiO2. A general purpose molecular beam scattering apparatus was constructed to investigate the mechanism of COF2 etching of Si. H2 and CH4 scattering from the FE (111) surface was studied in order to characterize the operation of this system. Dynamics of van der Waals bound clusters interacting with solid surfaces were investigated. Deposition of metallic layers from organometallic precursors was also studied. Silicon; Silicon dioxide; Carbonyl fluoride; Etching; Clusters; Thin films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1989
- Accession Number
- ADA217679
Entities
People
- Steven L. Bernasek
Organizations
- Princeton University