Electronic Properties of High-Temperature Superconductors
Abstract
We have developed a semiempirical tight-binding model for the electronic energy bands, the local and total densities of states, and the atomic valences in the high-temperature superconductors La(1.85)Sr(0.15)CuO4, YBaCu307, Bi2Sr2CuO6, Bi2CaSr2Cu2O8, Tl2Ba2CuO6, Tl2CaBa2Cu2O8, Tl2Ca2Ba2Cu3O10, TlCa3Ba2Cu4O11, BaPb(0.75)Bi(0.25)O3, and Ba(0.6)K(0.4)BiO3. Calculations of the changes in electronic properties associated with atomic substitutions in YBa2Cu3O7, Bi2CaSr2Cu2O8, and Tl2CaBa2Cu2O8 give results in agreement with expected chemical trends and consistent with observed changes in the superconducting properties. For example, substitution of Lead for Bismuth in BiMCaSr2Cu2O8 increases the concentration of hole carriers within the CuO2 planes. Similarly, doping with Mercury or Pb in TlMCaBa2Cu2O8 also affects the carrier concentration, with Hg creating holes and Pb destroying them. Oxygen vacancies in both La(1.85)Sr(0.15)CuO(4-y) and YBa2Cu3O(7-y) act as electron donors. This is consistent with the observations that oxygen vacancies degrade the superconductivity and metallic conductivity in these materials. Lanthanum vacancies in La2-xCuO4 donate holes, giving the same electronic effect as doping with divalent metal atoms or excess oxygen initially stoichiometric La2CuO4. We propose a specific excitonic mechanism for high-temperature superconductivity, which requires insulating metal-oxide layers adjacent to the superconducting planes. Theses.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1989
- Accession Number
- ADA217953
Entities
People
- Brent A. Richert
Organizations
- Air Force Institute of Technology