Focused Ion Beam Implantation
Abstract
During the latter half of the 1989 we have used the focused ion beam to implant new tunable Gunn diodes, CMOS transistors in circuits, and CCD's. Most of these devices have been tested. Tunable Gunn diodes were fabricated in GaAs and InP. The channels CMOS transistors were implanted with both Boron and Arsenic in a variety of doses, dose gradients, and geometries. CCD's were implanted with gradients of doping under each of the gate electrodes. Previous simulations have indicated that this type of gradient results in a built in field which would tend to push carriers out of each channel increasing the speed. The channels of GaAs MESFET'S have been implanted with various doses and dose geometries. Some of these MESFET'S will have submicron length gates fabricated by the focused ion beam. An SiN film is deposited over the channel to stop the ion penetration and lattice damage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1989
- Accession Number
- ADA217987
Entities
People
- John Melngailis
Organizations
- Massachusetts Institute of Technology