Joint NOSC/NRL (Naval Ocean Systems Center/Naval Research Laboratory) InP Microwave/Millimeter Wave Technology Workshop Held in San Diego, California on 25-26 January 1989
Abstract
Technical Highlights: Drift problem with MIS devices under attack with epitaxial dielectrics, heat pulse processing, silicon substrates, silicon wedge dielectrics, gentle plasma etching, sulfidation (5% drift over 100,000 sec, 4V drain, 4V gate), hydrogenation (2% drift), Ion implantation damages to 3 microns or more even for the shortest anneal cycle, Limits to HJ device performance related to epitaxial layer design (at present HBT working at 30% beta max), Atomic planar doping in use for MODFET on InP with matching-V sat about 1.6 to 1.8 X 10 to the 7th power cm/sec, Small drain current drift observed in SiO2 based HIGFET-drift less than 4% over 15 hours, InAlAs-InGaAs planar-doped HEMTs lattice matched to InP, 0-.25 micron T-gate, 900 mS/mm, 0.5 dB NF at 18 GHz, and Hot electron InP/InGaAs HBT ft=140 GHz, fmax=70GHz. Keywords include: Metal insulator field effect transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1989
- Accession Number
- ADA218216