High Efficiency Octave Bandwidth Millimeter Wave Power Amplifier

Abstract

MM-Wave monolithic distributed amplifiers are designed to cover the 30-60 GHz frequency band. Both low-pass bandpass and negative resistance compensated designs are developed. The MMIC designs are based on pseudomorphic MODFET devices having 1/4 micron gates fabricated on 3-inch wafers using a hybrid e-beam/optical stepper lithography technique. In addition, to 'standard' pseudomorphic MODFET structures with uniformly doped A1GaAs, psuedo-pulsed-doped structures were also developed to address low drain breakdown voltage problems. 60GHz monolithic gain cells with 10 mW output power were also developed. Keywords: GaAs; MMIC; MM-wave; Monolithic; Octave bandwidth; Distributed amplifier; Cascode; Negative resistance comp.; E-Beam/stepper lithography.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1989
Accession Number
ADA218245

Entities

People

  • James B. Beyer
  • S. N. Prasad
  • Stanley Swirhun
  • Vladimir Sokolov

Organizations

  • Honeywell International, Inc.

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Circuit Analysis
  • Circuits
  • Distributed Amplifiers
  • Electron Beam Lithography
  • Engineering
  • Field Effect Transistors
  • Frequency Bands
  • High Electron Mobility Transistors
  • Insensitive Explosives
  • Materials
  • Resistance
  • Standards
  • Transistors
  • Transmission Lines
  • Waveforms

Readers

  • Electronics Engineering
  • Military Logistics and Supply Chain Management

Technology Areas

  • 5G