Investigation of Schottky Barriers

Abstract

This final report summarizes the technical progress made under the auspices of AFOSR Contract F49620-86-K-0018. Substantial progress was made in two key areas: electronic structure studies of the Schottky barrier and transport studies. With respect to the electronic structure component, we applied ab initio electronic structure techniques to ideal metal-semiconductor interfaces. In a study of a sequence of metal-semiconductor contacts, we are able to address the problem of Schottky barrier pinning. Another study addresses the early stages of formation of Schottky barriers. With respect to the transport component, we developed some new techniques for treating high-field transport, in particular transport through a Schottky barrier. We also examine scattering from ionized dopants in the interstitial regions. (jes)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1989
Accession Number
ADA218422

Entities

People

  • Mark Van Schilfgaarde

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Abstracts
  • Band Structures
  • Boltzmann Equation
  • Charge Density
  • Chemical Compounds
  • Chemistry
  • Conduction Bands
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Equations
  • Fermi Levels
  • Materials Science
  • Semiconductors
  • Stratified Fluids
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Chemistry
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics