Reactions of Laser-Generated Free Radicals at Semiconductor Surfaces

Abstract

Reactions of laser-generated free radicals at semiconductor surfaces have been investigated by photoelectron spectroscopy of adsorbed surface layers and by laser-induced fluorescence detection of the gas-phase species. Systems investigated include dissociative chemisorption of XeF2 and CF3 on Si (lll), IR multiple-photon dissociation of alkylsilanes and characterization of the SiH2 dissociation product and deposition of metallic films from iron carbonyl. From these experiments, quantitative models have been developed for the reactivity of fluorocarbon radicals at silicon surfaces, intersystem state coupling in excited SiH2, and formation of metallic films. Surface chemistry; Laser photochemistry; Fluorocarbon chemistry; Silicon hydrides.

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Document Details

Document Type
Technical Report
Publication Date
Jan 22, 1990
Accession Number
ADA218552

Entities

People

  • Jeffrey I. Steinfeld

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemisorption
  • Chemistry
  • Demography
  • Detection
  • Fluorescence
  • Free Radicals
  • Heat Of Formation
  • Laser Induced Fluorescence
  • Lasers
  • Materials
  • Photochemistry
  • Semiconductors
  • Spectrometry
  • Spectroscopy
  • Surface Chemistry
  • Surface Reactions
  • Thin Films

Fields of Study

  • Chemistry
  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene