Gas Phase Decomposition of an Organometallic Chemical Vapor Decomposition Precursor to A1N: (Al(CH3)2NH2)3

Abstract

A novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organmetallic precursor Aluminum Nitride, (Al(CH3)2NH2)3, indicate a decomposition temperature between 200 and 270 C. The mass spectrum of the precursor at 100 C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature. Keywords: Methylamides; Reprints.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1990
Accession Number
ADA218714

Entities

People

  • Carmela C. Amato
  • John B. Hudson
  • Leonard V. Interrante

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Artificial Intelligence
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Classification
  • Contracts
  • Decomposition
  • Elements
  • Films
  • Mass Spectra
  • Mass Spectrometers
  • Materials
  • Materials Engineering
  • Materials Science
  • New York
  • Surface Reactions
  • Vapor Deposition

Readers

  • Thin Film Deposition Science.