Microelectronic Device Reliability

Abstract

Research on pulsed current electromigration in fine-line VLSI metallization was performed. A test structure containing 6 sample lines was designed in accordance with NBS recommendations (Ca. 1987) fabricated by an industrial firm and supplied to Clemson University for continued electromigration research.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1990
Accession Number
ADA218774

Entities

People

  • James W. Harrison Jr.

Organizations

  • Clemson University

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Circuit Boards
  • Classification
  • Computer-Aided Design
  • Computers
  • Corporations
  • Fabrication
  • Failure Mode And Effect Analysis
  • High Temperature
  • Military Research
  • Printed Circuit Boards
  • Printed Circuits
  • Reliability
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients
  • Universities

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Software Engineering
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics