Negative Electron Affinity for Infrared Detection

Abstract

This study extensively examined the optical properties of gallium phosphide (GaP), and concentrated upon the optical bistability of GaP device and a gallium phosphide infrared detector based on linear upconversion. To detect upconverted infrared signal the photoconducting scheme was tried. In this case the noise current by the pumping beam and imperfect surface state is too dominant to see the signal since the probe is directly contacted on the sample. The indication of infrared signal could be observed, but it is too weak to estimate the quantum efficiency. The sample surface defects and edge adsorption due to high impurity concentration are to be the reasons. Although the surface defects due to dangling bond and the band tailing effect are probably inherent in the system, it can be minimized by precise selection of the pump beam frequency.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1989
Accession Number
ADA218816

Entities

People

  • Martin A. Gundersen

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Detection
  • Detectors
  • Electro-Optics
  • Energy Bands
  • Heterojunctions
  • Infrared Detection
  • Infrared Detectors
  • Measurement
  • Metal-Semiconductor Junctions
  • Optical Properties
  • Optics
  • Power Electronics
  • Quantum Wells
  • Semiconductors

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing