Burnout Thresholds and Cross Section of Power MOS Transistors with Heavy Ions

Abstract

Power MOSFET heavy ion-induced Single Event Burnout tests were performed jointly by representatives of the Aerospace Corporation, NASA Goddard, NWSC Crane and Rockwell International. For the most part, presented are the results of the burnout threshold and cross section characterizations performed on n-channel power MOSFETs, however a small amount of p-channel data is also included. In addition, data on the effect of temperature, gate bias, total dose and inductive loading on MOSFET Single Event Burnout sensitivity is preferred. At the time of the test effort, 'radiation hardened' devices were being developed by International Rectifier and RCA/GE. The heavy-ion-induced burnout test results on available samples of these devices are also incorporated for comparison to the commercial and JEDEC versions tested.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1990
Accession Number
ADA218998

Entities

People

  • A. E. Waskiewicz
  • J. W. Groninger

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Angle Of Incidence
  • Bipolar Junction Transistors
  • Body Regions
  • Cosmic Rays
  • Crystal Lattices
  • Crystal Structure
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Ionization
  • Ionizing Radiation
  • Military Research
  • Plastic Explosives
  • Radiation
  • Security
  • Semiconductor Devices
  • Test Methods
  • Transistors

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Space
  • Space - Hall-Effect Thruster