Advanced Gas Phase Reactor for Growth of Ge sub x Si sub 1-x

Abstract

We have designed and constructed a reactor for the growth of Germanium (x) Silicon (1-x) films by the newly developed technique of Ultrahigh voltage/Chemical vapor deposition epitaxy. Films of varying germanium content have been successfully grown and characterized at temperatures as low as 577 C. Work is in progress with respect to optimization of the wafer cleaning procedure and studies of dopant incorporation and device fabrication will be initiated in the near future. Keywords: Gas phase reactors; Crystallography; Crystal growth; Germanium; Silicon; Thermochemistry; Epitaxial growth.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1989
Accession Number
ADA219012

Entities

People

  • A. G. Milnes
  • David W. Greve

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Computers
  • Construction
  • Electronics Laboratories
  • Engineering
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Germanium
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Universities

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Thin Film Deposition Science.