Secondary Ion Mass Spectrometry Characterization of Implants into GAAS and Gap for Waveguides and Integrated Optics Applications
Abstract
Hydrogen, Helium and most dopant elements were implanted into Gallium Arsenide, Gallium Arsenide Phosphide, Gallium Phosphide, GaSb, InP, InAs, InSb, and LiNbO3 at energies from 10 to 700 keV, and a few elements up to 2.4 MeV, in random and channeling orientations, annealed some of these implants, and measured their depth distributions using secondary ion mass spectrometry. (SIMS) . This work included studies of: characterization of Si implantation into GaAs in random and channeling orientations at energies from 10 keV to 6.0 MeV; a general description of as-implanted and annealed depth profiles of dopant implants (especially Beryllium and Silicon into GaP, GaAs, Indium Phosphide, and Indium Antimonide; illustrations of the effects of heterostructures, including superlattices, on the redistribution of mobile impurities (Hydrogen and Be) during thermal processing; brief illustrations of implants in other III-V technologies (GaAs/Si and GaAsP); lanthanide rare earth elements in III-V crystals; as-implanted and annealed MeV implants in III-V materials; characterization of proton exchanged Lithium Niobate; and redistribution of implanted H in LiNbO3.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 10, 1990
- Accession Number
- ADA219203
Entities
People
- Robert S. Wilson