Fundamental Studies and Device Development in Beta Silicon Carbide
Abstract
The dependence of growth rate of alpha-SiC on alpha-Silicon Carbide substrates and surface morphology on temperature, source gas/carrier gas flow rate ratios, and the degree of off-axis tilt have been investigated. Theoretical and experimental studies of Aluminum and Nitrogen incorporation into 6 Hydrogen- Silicon Carbide films during deposition have also been studied. Device research has involved studies of suitable ohmic and rectifying contacts, and the fabrication and characterization of Schottky and p-n junction diodes as well as Metal-Semiconductor field effect transistors, Metal-oxide-semiconductor field effect transistor and Impact Avalanche transit-time diodes. Alpha silicon carbide, Semi-conductors, Growth rate, Aluminum dopant, Nitrogen dopant, Ohmic contacts, Schottky contacts, MESFET, MOSFET, IMPATT.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1990
- Accession Number
- ADA219253
Entities
People
- Robert F Davis
Organizations
- North Carolina State University