Indium Phosphide Planar Gunn Diode

Abstract

An indium phosphide (InP) planar Gunn diode showing oscillations in the 20- to 40-GHz-frequency range was successfully fabricated and tested using epitaxially grown layers. Also demonstrated was the concept of selectively removing portions of one epilayer and refilling the recesses with a second epilayer. The working structure showed low resistance across the n/n+ interface. Processing techniques developed during the InP planar Gunn diode work are now incorporated into current work at NOSC. Also, successes in these experiments resulted in renewed interests in surface-oriented planar Gunn diodes. Keywords: Indium phosphide (InP), Vapor Phase Epitaxy (VPE), Planar gunn diode, Metalorganic Chemical Vapor Deposition (MOCVD), Monolithic circuits, Epilayer growth, Substrates.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1989
Accession Number
ADA219337

Entities

People

  • A. R. Clawson
  • Daniel Rubin
  • E. R. Schumacher
  • M. J. Taylor

Tags

DTIC Thesaurus Topics

  • Beam Leads
  • Chemical Vapor Deposition
  • Etching
  • Fabrication
  • Field Effect Transistors
  • Films
  • Frequency
  • Gunn Diodes
  • Materials
  • Military Research
  • Millimeter Waves
  • Oscillation
  • Resistance
  • Semiconductors
  • Standards
  • Substrates
  • Surface Finishing

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology