Molecular Beam Epitaxial Growth of Heterostructures to Study Quantum Interference Phenomena
Abstract
Heterostructure technology has received a tremendous impetus from the rapid advances in crystal growth techniques such as molecular beam epitaxy (MBE) . These advances are primarily responsible for the conception and realization of numerous novel concepts and devices. The work reported here involves the MBE growth and regrowth of heterostructures for quantum interference transistors and a detailed study of the physical mechanisms and the limitations imposed by them in such devices. We have investigated in detail the suitability of the MBE regrowth process for such applications. Very encouraging progress has been made. The performance characteristics of dual-channel quantum interference devices grown in our laboratory and defined by e-beam lithography have been measured and reported. From this work it is clear that to achieve enhanced performance and to demonstrate a large Aharonov-Bohm effect in these materials, etching and regrowth techniques need to be utilized. We have, therefore, studied the regrowth process of these heterostructures and have characterized the properties of the regrown materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1990
- Accession Number
- ADA219442
Entities
People
- P. Bhattacharya
Organizations
- University of Michigan