Single Event Upset in Irradiated 16K CMOS SRAMs

Abstract

The single-event upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total dose degradation anticipated in space applications are experimentally and theoretically investigated. Simulations of SEU sensitivity using a two-dimensional circuit/device simulator, with measured transistor threshold-voltage shifts and mobility degradations as inputs, are shown to be in good agreement with experimental data at high total dose. Both simulation and experiment show a strong SRAM-cell SEU 'imbalance,' resulting in a more SEU-tolerant 'preferred' state and a less-tolerant 'nonpreferred' state. The resulting cell imbalance causes an overall degradation in SEU immunity, which increases with increasing total dose and which should be taken into account in SEU testing and part characterization. Keywords: Single event upset tests; Space environments; Radiation damage; Static random access memories; Complementary metal oxide semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Feb 20, 1990
Accession Number
ADA219980

Entities

People

  • C. L. Axness
  • D. M. Fleetwood
  • J. R. Schwank
  • J. S. Browning
  • P. S. Winokur
  • Rokutano Koga

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Complementary Metal-Oxide Semiconductors
  • Corporations
  • Degradation
  • Dose Rate
  • Electronics Laboratories
  • Experimental Data
  • Immunity
  • Integrated Circuits
  • Metal Oxide Semiconductors
  • Mobility
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Space Systems
  • Transistors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics
  • Space