Optoelectronics Research Center
Abstract
This year has been characterized by major upgrades in facilities and equipment. In December of 1986, the first laboratories were moved into the new Electrical and Computer Engineering building. Laboratories associated with the Optoelectronics Research Center that are now operational in this new building include: the Class-100 cleanroom; two optoelectronics device physics laboratories - one devoted to relatively low power devices with experiments in nonlinear dynamics, static properties of multi-mirror cavities, narrow linewidth diode lasers, etc. and a second devoted to characterization of devices fabricated at the Center for High Technology Materials, and to high-power devices; a laser-materials interaction laboratory; laboratories for rf- sputtering of PLZT thin films; ion-assisted deposition of thin-films; materials characterization, bonding, e-beam evaporation; SEM facilities. Laboratories for ion-beam figuring and heterodyne characterization of high-speed uv-detectors, not funded as part of this program, have also been located in this facility. Optoelectronics, Nonlinear dynamics, Ion-beam, High-speed uv-detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1988
- Accession Number
- ADA220052
Entities
People
- Steven Brueck
Organizations
- University of New Mexico