Spectral Properties of a 1.3-Micrometers InGaAsP Diode Laser under Direct Modulation

Abstract

Direct modulation of a buried heterostructure (BH) InGaAsP laser diode was performed up to 18 GHz, and FM properties were observed. The number of lasing modes increased with increasing modulation depth. For a given rf power, the FM index went from 0.7 to 0 as the modulation frequency was increased. These measurements indicate that the nonlinear gain effects mainly influence the modulation characteristics of this laser, and wider bandwidths and modulation indexes can be achieved in this type of multimode device. High frequency, Direct current modulation, High-speed diode lasers, InGaAsP, Fast detectors, Nonlinear gain effects, Modulation index, FM properties.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1989
Accession Number
ADA220066

Entities

People

  • Emanuel Katzen
  • Fred Semendy

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Amplifiers
  • Amplitude Modulation
  • Analyzers
  • Bandwidth
  • Detectors
  • Dynamic Response
  • Frequency
  • Frequency Modulation
  • Frequency Shift
  • Laser Diodes
  • Lasers
  • Measurement
  • Military Research
  • Modulation
  • Radio Frequency Power
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy