Microwave and Ion Beam Studies of an Applied B (Theta) Diode
Abstract
A parameter study of the microwave radiation emitted from an 'Applied B theta' magnetically insulated ion diode was undertaken using a microwave detection system which covered the frequency range from approximately 0.3 to 85 GHz. The amount of power measured implies that collective mechanisms are responsible for the generation. While no theoretical framework exists to explain the mechanism for the microwave flux, comparison with a sample two-dimensional model of the diode suggests that the variation of the peak microwave power as a function of the applied field ratio Bo/B* is connected in a general way with the extent to which the electron sheath covers the anode-cathode (A-K) gap. A study of the quality of the ion beam generated by the B theta Diode indicates the existence of a disruptive mechanism of length scale 0.5 cm in the A-K gap. The effects of the mechanism are most readily observed when the applied field is adjusted so as to produce the largest amount of micro-wave radiation. A deformation of the anode plasma appears to be the most likely cause of the beam disruption. (rrh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADA220467
Entities
People
- Timothy J. Renk
Organizations
- Cornell University