Solid State Research
Abstract
Partial Contents: Electrooptical devices -- Theoretical comparison of lumped-element and traveling-wave integrated-optic phase modulators, Comparison of the thermal stability of semi-insulating InP:Fe and InP:Ti:Hg, Wafer fusion by mass transport (A new technique for monolithic integration), Mass Transport of GaInP, and External cavity operation of InGaAsP diode laser arrays; Quantum electronics -- Gain-switched pulsed operation of microchip lasers, Suppression of laser spiking by intracavity second-harmonic generation, Scalable end-pumped Nd:YAG laser, and Lateral-mode structure of external-cavity diode lasers with residual facet reflectivity; Determination of MBE growth rate by digital signal processing of time-dependent RHEED intensity data; Submicrometer technology -- Optical properties of fused silica exposed to 193-nm radiation from an excimer laser, and Fabrication of regrowth field effect transistor test structures by electron beam lithography; Microelectronics -- Resonant-tunneling oscillators up to 420 GHz, Observation of optically pumped intersubband emission from quantum wells, and Casting process for multichip interconnects; and Analog device technology -- Atomic oxygen source for superconducting films, and Hybrid analog/ digital circuitry for superconductive time-integrating correlator.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1989
- Accession Number
- ADA220597
Entities
People
- Alan L. McWhorter
Organizations
- Massachusetts Institute of Technology