Solid State Research
Abstract
Partial Contents: Electrooptical devices -- High-performance optical analog link using external modulation, 1-Gb/s free-space optical interconnection between digital circuits, and Mass-transported buried-heterostructure GaAs lasers; Quantum electronics -- Single frequency Nd:YAG laser, Laser pumping of solid-state amplifiers using random binary-phase plates, Passively mode-locked Ti:Al2O3 laser using a nonlinear coupled cavity, and Picosecond nondegenerate four-wave mixing in semiconductor waveguides; Materials research -- Total-dose radiation effects on PtSi Schottky-barrier infrared detectors and focal plane arrays; Submicrometer technology -- Aluminum oxides as imaging materials for 193-nm excimer-laser lithography, Planarizing a-C:H and SiO2 films prepared by bias electron cyclotron resonance plasma deposition, and Electrical, crystallographic, and optical properties of ArF-laser-modified diamond surfaces; Microelectronics -- CCD camera developed for wavefront-sensor applications, Surface-state dark-current suppression in CCDs, and Permeable base transistor track-andhold circuits; and Analog device technology -- Low-loss substrates for high-temperature superconductors, and Multitarget cosputtering of Y1Ba2Cu3Ox superconducting films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1989
- Accession Number
- ADA220601
Entities
People
- Alan L. McWhorter
Organizations
- Massachusetts Institute of Technology