Gallium Arsenide Pilot Line for High Performance Components
Abstract
The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT- 2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was 'right first time;' the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. But we know that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 16, 1990
- Accession Number
- ADA220948
Entities
People
- E. F. Lapham
- Robert C. Vehse