EHF Heterojunction Bipolar Transistors

Abstract

The purpose of this work is to determine if strained layers can be used to enhance performance for GaAs-based HBTs (Tasks 4 and 5), we have investigated the use of InGaAs layers in the base and emitter cap layer. The purpose is to aid in formation of ohmic contacts and, in the case of InGaAs in the base region, also to serve as an etch stop. The performance of this device is comparable to that of a GaAs/AlGaAs control device with no InGaAs layers, so we conclude that the use of InGaAs contact layers does not significantly improve performance. However, the use of an InGaAs etch-stop layer in the base greatly simplifies device processing, which will enable us to use thinner base regions with reduced transit times and, therefore, will improve device frequency response.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1990
Accession Number
ADA220984

Entities

People

  • Burhan Bayraktaroglu
  • Thomas C. Henderson

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Base Metal
  • Bipolar Junction Transistors
  • Conduction Bands
  • Current Density
  • Fabrication
  • Frequency
  • Frequency Response
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Metal-Semiconductor Junctions
  • Millimeter Waves
  • Substrates
  • Thickness
  • Transistors
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design