Failure Mechanisms of GaAs Transistors - A Literature Survey

Abstract

This report is a summary of information from a literature survey of GaAs component failure modes. A brief outlook on GaAs material and techniques used in fabrication of GaAs devices is included. Failure modes common to GaAs MESFET's are discussed excluding modes common to Si components such as metal migration and intermetallic formation. As the same failure modes seen in discrete MESFET's will occur in MMIC and digital GaAs devices, the discussion does not include these devices per se. Side-gating or backgating problems seem to be material or design related and therefore are not treated as failure modes. Besides the interaction of metal and GaAs in ohmic contact areas, the importance of the quality of the GaAs surface in the reliability of GaAs components is discussed. Also discussed is the relation of free As on the surface to both long and short term failure modes.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1990
Accession Number
ADA221089

Entities

People

  • Snorre Prytz

Organizations

  • Syracuse University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Crystal Lattices
  • Crystals
  • Digital Circuits
  • Electron Density
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Integrated Circuits
  • Logic Gates
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Structural Health Monitoring of Composite Structures.
  • Systems Analysis and Design