Microscopic Theory of Non-Linear Phenomena in Semiconductor Superlattices
Abstract
The research on Si-Ge superlattices has a) refuted the explanation of optical spectra, b) provided the first clear cut argument that shows the importance of defects and interface roughness in interpreting experimental data; this is now an accepted status quo, c) demonstrated the first quantitative study on finite superlattices. A quantitative study of the role of non-ideal interfaces (i.e. those where the two dimensional translations symmetry in the interface plane is not fully preserved) is presented. Demonstrated is the possibility to study real geometry structures under strong external fields. Presented is a fresh picture of the valley mixing which occurs when states of different bulk momenta cross, for example in GaAsA1As structures under hydrostatic pressure or under the influence of a strong external electric field. The picture based on particle in a box perturbative models fails to represent correctly even the symmetry related features predicted in our theory and seen in experiments. (JHD)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1990
- Accession Number
- ADA221106
Entities
People
- M. Jaros
Organizations
- Newcastle University