Light-Millimeter Wave Interactions in Semiconductor Devices
Abstract
The investigation focused on the nature of optical-millimeter wave interactions in high frequency semiconductor devices. It relied primarily upon optical mixing between frequency locked lasers but also included picosecond studies with a number of different laser systems. Actual devices investigated ranged from FETs to high frequency HEMTs(High Electron Mobility Transistors) and HBTs(Heterojunction Bipolar Transistors.) The actual experiments ranged using optical techniques to obtain fundamental physical information about the nature of these devices at high frequencies to investigating optical control and new application areas. The devices range from special configurations developed at UCLA to advanced, submicron, GaAs alloy devices fabricated in local high technology research laboratories. (JES)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 30, 1990
- Accession Number
- ADA221214
Entities
People
- Harold R. Fetterman
Organizations
- University of California, Los Angeles