Silicon Oxidation Studies: Origins of the Properties of Thermally Prepared SiO2 Films

Abstract

This research comprises a study of the origins of mechanical, optical and electronic properties of thermally grown thin SiO2 films on Si substrates at related to the film growth mechanisms and of the cleaning of Si and InP surfaces.

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Document Details

Document Type
Technical Report
Publication Date
Apr 25, 1990
Accession Number
ADA221240

Entities

People

  • Eugene A. Irene

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Classification
  • Contracts
  • Films
  • Infrared Spectroscopy
  • Kinetics
  • Literature
  • Low Temperature
  • Materials Science
  • Measurement
  • Optical Properties
  • Orientation (Direction)
  • Oxidation
  • Security
  • Substrates
  • Surface Properties
  • Thermionic Emission

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene