Quantum-Confined Hole States in Double-Barrier Resonant Tunneling Structures

Abstract

Double-barrier resonant tunneling structures often contain undoped spacer layers separating heavily n-doped regions from active regions of the structure. Conduction band electrons coming from the heavily doped regions diffuse into the undoped regions, producing potential energy profiles that can confine hole states within the spacer layers. A classical model is used to predict the potential energy profiles in these structures, and the associated hole binding energies and wave functions are calculated numerically.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1990
Accession Number
ADA221342

Entities

People

  • John D. Bruno
  • Richard L. Tober

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Charge Density
  • Conduction Bands
  • Differential Equations
  • Electric Fields
  • Electron Density
  • Electron Gas
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Equations
  • Free Electrons
  • Potential Energy
  • Semiconductors
  • Space Charge
  • Valence Bands
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing