Synthesis of Large Area, Monocrystalline TiC as a Substrate for Heteroepitaxial Growth of Beta-SiC
Abstract
Work on this program has focused on achieving the heteropitaxial growth of monocrystalline Beta-Silicon Carbide on silicon substrates. DMI has finishing de-bugging its upgraded Beta-SiC CVD reactor. Experiments were performed to determine the optimal etching treatment for silicon substrates to prepare them for Beta-SiC CVD. Etching experiments using pure Hydrogen and 1 - 5% Hydrogen Chloride/Hydrogen indicated that mild etching of the silicon surface only served to decorate crystallographic defects left behind by the chem- mechanical polishing of the Si wafer. A vigorous etch by 5% HCl/H2 at 1300 C for 10 minutes was sufficient to remove several microns of the silicon, exposing a reasonably flat and smooth Si surface suitable for Beta-SiC heteroepitaxial growth. DMI believes it has grown heteroepitaxial Beta-SiC on Si from 1.9% methyltrichlorosilane (MTS) diluted in H2 at 1300 - 1400 C for five minutes. To finish the program, DMI will work to grow a approx. 30 micrometer thick, freestanding Beta-SiC single crystal and will perform a chlorinated oxidation on the Beta-SiC to getter crystallographic defects from its surface. Titanium Carbide will be then be deposited onto the Beta-SiC single crystal by CVD. The SBIR program directly supports DoD efforts to develop monocrystalline Beta-SiC as a semiconductor material.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 07, 1990
- Accession Number
- ADA221392
Entities
People
- Donald Kupp
- Richard Koba