PH3 Surface Chemistry on Si(111)-(7x7) A Study by Auger Spectroscopy and Electron Stimulated Desorption Methods
Abstract
The adsorption and decomposition of phosphine hydride on silicon (III)-(7x7) was investigated in ultrahigh vacuum by means of temperature programmed desorption (TPD), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and electron stimulated desorption (ESD) methods. Phosphine adsorbs on Si(III)-(7x7) at T=120K with an initial sticking coefficient of S(o) equivalent to 1 through a mobile (extrinsic) precursor state. Some PH3 dissociative adsorption at 120 K is observed. Thermal activation of the adsorbed species results in desorption of a molecular PH3 species up to 550 K. Further heating produces H2(g) desorption at T equivalent to 740 K and P2(g) desorption at T equivalent to 1010 K, thus indicating that PH3 decomposition has occurred. AES and ESD studies of the adsorbed species reveal that decomposition takes place by the breaking of P-H bonds in PHx(a) to form Si-H species on the surface for 120 K < T < 700 K. Keywords: Si (III); PH3; Phosphine; Phosphorus; Adsorption; Silicon; Doping; Chemical vapor deposition; Passivation; Semiconductors; Crystal growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 11, 1990
- Accession Number
- ADA221508
Entities
People
- J. T. Yates Jr.
- P. A. Taylor
- R. M. Wallace
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh