Research on Sputtering of Ferroelectric Thin Films
Abstract
The magnetron sputtering technique has been used to grow morphotropic phase boundary ferroelectric thin films of tungsten bronze PBN:60 and pervoskite PLZT. Film crystallinity was found to be strongly influenced by substrate temperature, with temperatures of 500-600 C usually required. Single crystal PBN:60 films were grown on SBN:60 substrates, whereas grain-oriented films were achieved on (100)-oriented Si substrates. PLZT films are grain-oriented for (001)-oriented SBN and have excellent surface quality for guided wave applications. This is the first time such films have been grown on tungsten bronze substrates. Both PBN:60 and PLZT films present a great promise for SLM and electronic memory applications. (rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1990
- Accession Number
- ADA221792
Entities
People
- R. R. Neurgaonkar