Optoelectronics Research Center
Abstract
The Optoelectronic Research Center at the University of New Mexico has continued to develop its research capabilities during this reporting period. With partial support from the Air Force Office of Scientific Research, a comprehensive set of facilities for opto-electronics research including materials growth, fabrication science, device development and integration have been established. Allied efforts in laser spectroscopy, in theory and modelling and in manufacturing science provide a uniquely complete environment for important developments in optoelectronics. Specific accomplishments during this period include: development of advanced metal-organic chemical vapor deposition growth of III-V semiconductors; PLZT films for non-linear optical applications; sub-um grating fabrication investigations; development of photolithographic and etching and switching properties of high-power diode lasers. A substantial effort has been devoted to the development of resonant-periodic gain, surface-emitting lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1989
- Accession Number
- ADA221926
Entities
People
- Steven Brueck
Organizations
- University of New Mexico