Laser Induced Surface Chemical Epitaxy
Abstract
Studies of the thermal and photon-induced surface chemistry of dimethyl cadmium (DMCd) and dimethyl tellurium (DMTe) on GaAs(100) substrates under ultrahigh vacuum conditions have been performed for substrate temperatures in the range of 123 K to 473 K. Results indicate that extremely efficient conversion of admixtures of DMTe and DMCd to CdTe can be obtained using low power 193 nanometers laser pulses at substrate temperatures of 123 K. Subsequent annealing at 473 K produces an epitaxial film. Given the similar electronic structure of other II-VI metal alkyls, such as dimethyl mercury, zinc, and selenium, it is believed that laser induced surface chemical epitaxy is suitable for producing patterned deposits of II-VI quantum well structures. Keywords: II- VI epitaxy, Laser induced chemistry, Deposition, Thin film, Vapor deposition, LCVD, MOMBE, Metalorganic molecular beam epitaxy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1990
- Accession Number
- ADA222082
Entities
People
- Andrew Freedman
- Charter D. Stinespring
Organizations
- Aerodyne Research