Ni Impurity Effects on Hydrogen Surface Chemistry and Etching of Si(111)
Abstract
The effect of impurity Nickel on the etching of Silicon by hydrogen chemisorption is examined in ultrahigh vacuum with Auger electron spectroscopy and temperature programmed desorption methods. It is found that a small surface concentration of Ni inhibits the production of Silane from atomic Hydrogen adsorption on the Si(111)-Ni surface. Keywords: Silane, Hydrogen, SiH4, si(111), Ni, Physical chemistry, Impurities, Metal films, AES.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 21, 1990
- Accession Number
- ADA222083
Entities
People
- C. C. Cheng
- J. T. Yates Jr.
- P. A. Taylor
- R. M. Wallace
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh