Background Effects in ESDIAD Measurements on Si(111)-(7x7)

Abstract

The background effect in electron stimulated desorption ion angular distribution (ESDIAD) measurements due to soft x-ray production on Si(111)-(7x7) is investigated. We find that the background intensity from a Si(111)-(7x7) surface varies linearly with incident electron beam energy and current density. It is also found that the elimination of the background effect (by subtraction) plays a crucial role in both quantitative and qualitative interpretations of digital ESDIAD measurements on silicon, as well as to similar measurements on other surfaces. (jes)

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Document Details

Document Type
Technical Report
Publication Date
May 21, 1990
Accession Number
ADA222242

Entities

People

  • J. T. Yates Jr.
  • M. J. Dresser
  • P. A. Taylor
  • R. M. Wallace
  • Wolfgang J. Wolfgang J. Choyke

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Acquisition
  • Charged Particles
  • Chemistry
  • Current Density
  • Desorption
  • Electron Beams
  • Electron Energy
  • Electron Guns
  • Electrons
  • Emission
  • Energy
  • Measurement
  • Military Research
  • Production
  • Scattering
  • Soft X Rays
  • X Rays

Fields of Study

  • Physics

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Phased Array Antenna Design.
  • Theoretical Analysis.

Technology Areas

  • Directed Energy
  • Microelectronics