Background Effects in ESDIAD Measurements on Si(111)-(7x7)
Abstract
The background effect in electron stimulated desorption ion angular distribution (ESDIAD) measurements due to soft x-ray production on Si(111)-(7x7) is investigated. We find that the background intensity from a Si(111)-(7x7) surface varies linearly with incident electron beam energy and current density. It is also found that the elimination of the background effect (by subtraction) plays a crucial role in both quantitative and qualitative interpretations of digital ESDIAD measurements on silicon, as well as to similar measurements on other surfaces. (jes)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 21, 1990
- Accession Number
- ADA222242
Entities
People
- J. T. Yates Jr.
- M. J. Dresser
- P. A. Taylor
- R. M. Wallace
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh