Face-Specific Interaction of MOS4(2-) with Oriented Crystals of (0001) CdX(X = Se, S)

Abstract

Oriented (0001) Cdx (X = S, Se) crystals selectively adsorb MoS4(2-) (Molybdenum tetrasulfide ion) onto the Cadmium-rich faces. Binding of MoS4(2-) is effected by dipping the CdX crystals into CH3CN (acetonitrile) containing 20 mM (Et4N)2MoS4. Removal of the crystal from the solution followed by rinsing with CH3CN leaves MoS4(2-) on the Cd- but not X-rich face of the crystal as detected by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The specificity for Cd-face vs. X-face binding is typically > 5:1 as determined by XPS and AES data for both faces of the same crystal. S element maps for the MoS4(2-)-modified, Cd-face of CdSe crystals reveal non- uniform binding of MoS4(2-). There is a correlation of the regions of MoS4(2-) binding with the crystal planes revealed in the pretreatment/etch procedure. (jg)

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Document Details

Document Type
Technical Report
Publication Date
May 17, 1990
Accession Number
ADA222405

Entities

People

  • James J Hickman
  • Mark S. Wrighton

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Civil Engineering
  • Compound Semiconductors
  • Crystals
  • Electron Beams
  • Electron Spectroscopy
  • Electrons
  • Elements
  • Military Research
  • Photoelectrons
  • Spectra
  • Spectroscopy
  • United States
  • X Ray Photoelectron Spectroscopy
  • X Rays

Readers

  • Chemistry (specifically Chemical Fluorescence)
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene