Role of Surface Passivation in the Integrated Processing of MOS structures

Abstract

In order to achieve low defect densities and process simplification, future ULSI manufacturing is expected to incorporate multichamber integrated vacuum processing equipment. This raises opportunities for new levels of contamination control, including microscopic reactive impurities as well as particles, but also introduces new questions about how to successfully integrate process steps such as preoxidation cleaning with thermal oxidation. In this paper we describe electrical properties of simple MOS capacitors prepared in a multichamber integrated ultrahigh vacuum (UHV) processing system with in-situ analysis capabilities. This system has allowed us to integrate the surface preclean steps with the thermal oxidation process without air exposure between the two. In-situ surface analysis has permitted characterization of the precleaned surface, particularly the concentration of oxide and carbon present after different precleaning treatments.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA222630

Entities

People

  • G. W. Rubloff
  • M. Lichr
  • M. Offenberg
  • S. R. Kasi

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Barometric Pressure
  • Electrical Properties
  • Electron Diffraction
  • Electrons
  • Fabrication
  • Impurities
  • Integrated Systems
  • Measurement
  • Military Research
  • Oxidation
  • Oxides
  • Oxygen
  • Processing Equipment
  • Surfaces
  • Ultrahigh Vacuum
  • Vacuum
  • X Rays

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design
  • Thin Film Deposition Science.