Rapid Annealing of Iron Implanted Hg(1-x)Cd(x)Te

Abstract

Different Rapid Thermal Annealing techniques have been employed to achieve damage removal and electrical activation of dopants in ion implanted Hg1-xCdxTe x = 0.2, 0.3). As seen by Rutherford Backscattering Spectrometry combined with channeling and Auger measurements annealings with a CO2 laser or a flash lamp lead to good removal of implantation damage without causing changes in the stoichiometry. These techniques, however, suffer from complexity and lack of reproducibility. The new simple method for RTA of mercury containing crystals Annealing by immersion in a how MErcury BAth (AMEBA) which we have developed within the present project was found to be comparable to other more complicate techniques as for improving the electrical properties of HgCdTe as deduced from Hall and differential Hall measurements. Keywords: Hg1-xCdxTe, Ion implantation, Damage annealing, Stoichiometry, Electrical properties.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1990
Accession Number
ADA222777

Entities

People

  • Rafael Kalish

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Carbon Dioxide Lasers
  • Crystal Structure
  • Detectors
  • Electrical Properties
  • Electron Spectroscopy
  • Energy
  • Hall Effect
  • Ion Implantation
  • Lasers
  • Materials
  • Measurement
  • Point Defects
  • Spectra
  • Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition