Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions

Abstract

We have studied the properties of semiconductor heterojunctions using several novel analytical and experimental techniques. A new, and highly accurate means for measuring the properties of heterojunctions has been demonstrated, where the measurements of the band offset energies can be made even in the presence of high densities of interface charge. The techniques developed have been applied to study both InGaAs/InP as well as HgCdTe/CdTe heterojunctions, affording the most accurate measurements obtained to date possible via the use of novel test structures consisting of organic-on-inorganic semi-conductor contact barrier diodes. Furthermore, we have grown InGaAs/InP heterojunctions with the lowest defect densities yet reported, and obtained the surprising result that the defect charge density is independent of the degree of lattice mismatch. (JES)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1990
Accession Number
ADA222890

Entities

People

  • Stephen R. Forrest

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Compound Semiconductors
  • Crystal Structure
  • Electrical Engineering
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Heterojunctions
  • Infrared Detectors
  • Materials Science
  • Metal-Semiconductor Junctions
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics