Defects Associated with the Incorporation of Germanium in Gallium Arsenide
Abstract
Above and below bandgap excitation studies were performed on Gallium Arsenide samples implanted with Germanium to assess the nature of impurities and defects associated with the incorporation of this element. In addition, dual implanted GaAs samples ((Ge+Ga and Ge+As)) were also investigated to further facilitate the characterization and identification of probable stoichiometric defects. The luminescence results are presented for samples implanted with various doses of ions spanning 1E13-1E15 1/(centimeters squared) at an energy of 120 kilo electron volts, and annealed for 15 minutes at a temperature of 900 deg C. Keywords: Theses, Gallium arsenide, Compound semiconductor devices, Optoelectronic devices, Bandgap excitation studies, Doping, Defects, High temperature, Stoichiometric defects, Vacancies, Interstitials, Antisites.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1990
- Accession Number
- ADA222953
Entities
People
- Kevin J. Keefer
Organizations
- Air Force Institute of Technology