Electron-Phonon Interaction and transport in Artificially Made Semiconductor Microstructures
Abstract
Our research accomplishments under this contract cover a wide area of transport and electron phonon interaction processes in artificially made semiconductor microstructures including a complete theory for picosecond relaxation phenomena and hot electron energy loss in semiconductor quantum wells and heterostructures, a theory for inelastic scattering in ballistic hot electron transistors, a theory for elementary excitations in low dimensional semiconductor microstructures, a theory for the quasiparticle properties of semiconductor microstructures and a theory of band gap renormalization. Our theory includes plasmon phonon coupling, dynamical screening slab and interface phonon effects. Our calculated results are in excellent quantitative agreement with the available experimental results in semiconductor microstructures. Our quantitative theoretical results will be of use to a wide class of next- generation transistor and opto-electronic devices which are based on artificial semiconductor microstructures. These include high-electron-mobility-transistors, ballistic hot-electron transistors, resonant tunneling diodes and various non-linear opto-electronic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1990
- Accession Number
- ADA223061
Entities
People
- Sankar Das Sarma
Organizations
- University of Maryland