Parametric Testing for the RSRE CMOS, Silicon on Sapphire Process
Abstract
This memorandum describes the parametric testing methodology implemented to evaluate the outcome of an in-house CMOS, silicon on sapphire process in its development phase. The parametric testing methodology implemented is unconventional in that it seeks to validate the assumptions made when obtaining the parameter values sought rather than assuming that they are applicable. This is achieved by associating quality factors with each of the parameters evaluated, which will only be close to their ideal values when the assumptions made are valid. In addition, the procedures used to evaluate the parameters sought and the programs subsequently employed to analyse the parametric data thus obtained do not require prior knowledge of the range of parameter values anticipated. This method has been found to be of considerable value in practice, since it eliminates the need for an initial validation exercise and also checks that the assumptions which were originally made remain applicable as the process evolves. Whilst the methodology has only been implemented for a CMOS, silicon on sapphire process, it could be employed with equal effect for any other semiconductor process during its development phase. Keywords: Complementary metal oxide semiconductors; Parametric analysis; Great Britain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1990
- Accession Number
- ADA223449
Entities
People
- D. J. Boller
Organizations
- Royal Signals and Radar Establishment