High Throughput MBE Materials for MODFET's

Abstract

It has been shown that the preferred technique for the growth of MODFET material is by MBE, since competing technologies have been unable to demonstrate a reproducible technique for the growth of these devices. However, MBE as a production technique has two major drawbacks: the capital investment is high, and the growth is slow. A new approach to the problem of increasing MBE throughput and reducing wafer cost is to use existing MBE systems to grow the same high quality material as is currently grown, but at a much faster pace. This required only a small modification of the beam source. Research results have demonstrated that MODFET material can be grown at growth rates up to five times those currently used, with no degradation in electrical performance. This translates directly into cost savings for wafers grown. Keywords: Material growth; Wafers; Multi-wafer growth; Gallium arsenide.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1990
Accession Number
ADA223452

Entities

People

  • C. E. Wood

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capital Investments
  • Ceramic Materials
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Investments
  • Materials
  • Measurement
  • Metals
  • Molecular Beams
  • Money
  • Semiconductors
  • Standards
  • Throughput

Fields of Study

  • Materials science

Readers

  • Life Cycle Cost Analysis
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene