A Planar MMIC-Compatible Transferred Electron Device for Millimeter-Wave Operation

Abstract

The objective of this work was to develop a voltage tunable 35 gigahertzs MMIC oscillator. The active element is a planar field effect controlled transferred electron device ('FECTED'). Discrete FECTEDs mounted in microstrip circuits produced 50 milliwatts with 5% efficiency (pulsed) and 30 milliwatts with 3% in cw operation. Precise control of frequency and 100% yield was obtained with fully integrated ('MMIC') oscillators but only 1% efficiency and 5 mW have been achieved. Higher efficiencies and power levels can be expected with optimized circuitry. Keywords: MMIC-compatible transferred electron devices, Field effect controlled TEDs (FECTEDs), VCO at millimeter-wave frequencies, Gallium arsenide and indium phosphide, Transferred electron (Gunn) effect.

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Document Details

Document Type
Technical Report
Publication Date
Feb 16, 1990
Accession Number
ADA223509

Entities

People

  • Hartwig W. Thim

Organizations

  • Johannes Kepler University Linz

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Computer Simulations
  • Computers
  • Electrical Engineering
  • Electronics Laboratories
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Gunn Diodes
  • Impedance
  • Integrated Circuits
  • Millimeter Waves
  • Monolithic Microwave Integrated Circuits
  • Power Levels
  • Semiconductors
  • Simulations

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics