II-VI Semiconductor Superlattices

Abstract

ZnSe was doped with Ga to electron concentrations in the low 10 to the 17th power/cc. range. It was determined that optimum doping occurred for a Se:Zn flux ratio of close to unity as measured with a quartz crystal monitor. DLTS measurements indicated that delta doped samples had an order of magnitude less deep level traps than uniformly doped samples. Monte Carlo simulations of the growth kinetics of ZnSe, combined with absolute flux measurements, provided information about sticking coefficients and insight into stoichiometric growth conditions. The nucleation of epitaxial ZnSe on epitaxial GaAs was studied for the first time. MISFET devices were fabricated, and MIS capacitor C-V characteristics were used to evaluate the properties of the heterovalent interface Techniques were found by which interface state densities were reduced to values comparable to (Al,Ga)As. Keywords: Monte Carlo method; MOSFET semiconductors; Lattice dynamics.

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Document Details

Document Type
Technical Report
Publication Date
Apr 17, 1990
Accession Number
ADA223748

Entities

People

  • Nobuo Otsuka
  • Robert L. Gunshor

Organizations

  • Purdue University

Tags

DTIC Thesaurus Topics

  • Air Force
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Epitaxial Growth
  • Heterojunctions
  • Measurement
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Monte Carlo Method
  • Optical Properties
  • Optics
  • Quantum Electronics
  • Quantum Wells
  • Raman Scattering
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics