Polycrystalline Diamond Junction Field Effect Transistors (JFETS)

Abstract

The overall objective of this work is to develop a diamond junction field effect transistor (JFET) technology. The JFET transistor design is an approach that takes advantage of diamonds large bandgap and utilizes this property to help overcome the lack of shallow dopants. The overall approach is to develop a diamond JFET technology through optimization of junction properties that can utilize near degenerate channel boron doping. The high doping levels are necessary to reduce the boron dopant activation energy. The primary approach is to control the built in junction voltage through nitrogen doping, control junction edge leakage with a passivation technology based on selective oxidation and heavily dope the channel with boron. Keywords: Diamond, Transistors, JFET, Doping, Epitaxy, Diodes, Fabrication, Nitrogen, Oxygen, Boron, Polycrystalline, Crystallography, Physics.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1990
Accession Number
ADA223784

Entities

People

  • Dale Moyer
  • Maurice Landstrass

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Crystals
  • Diamond Films
  • Electron Beams
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Ionizing Radiation
  • Materials
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Raman Spectra
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.